Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-lumi...
| Những tác giả chính: | , , , , , , |
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| Định dạng: | Conference item |
| Được phát hành: |
2012
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