Enhanced ferroelectric property of P(VDF-TrFE-CTFE) film using room temperature crystallization for high-performance ferroelectric device applications
The ferroelectric β-phase in a poly(vinylidenefluoride-trifluoroethylene-chlorotrifluoroethylene) film is successfully formed using a room temperature solvent-annealing process and shows enhanced ferroelectricity compared to a thermally annealed film. Applications in electronics and energy are demon...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Journal article |
| Published: |
Wiley
2016
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| _version_ | 1826296160176832512 |
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| author | Cho, Y Ahn, D Park, J Pak, S Lee, S Jun, B Hong, J Lee, S Jang, J Hong, J Morris, S Sohn, J Cha, S Kim, J |
| author_facet | Cho, Y Ahn, D Park, J Pak, S Lee, S Jun, B Hong, J Lee, S Jang, J Hong, J Morris, S Sohn, J Cha, S Kim, J |
| author_sort | Cho, Y |
| collection | OXFORD |
| description | The ferroelectric β-phase in a poly(vinylidenefluoride-trifluoroethylene-chlorotrifluoroethylene) film is successfully formed using a room temperature solvent-annealing process and shows enhanced ferroelectricity compared to a thermally annealed film. Applications in electronics and energy are demonstrated with significantly enhanced device performances for a solvent annealing (SA) film employed devices compared to a thermal annealing film employed due to enhanced ferroelectricity of the SA film. |
| first_indexed | 2024-03-07T04:12:04Z |
| format | Journal article |
| id | oxford-uuid:c826b75a-dc5c-4420-8602-f7b2fc671e94 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T04:12:04Z |
| publishDate | 2016 |
| publisher | Wiley |
| record_format | dspace |
| spelling | oxford-uuid:c826b75a-dc5c-4420-8602-f7b2fc671e942022-03-27T06:50:19ZEnhanced ferroelectric property of P(VDF-TrFE-CTFE) film using room temperature crystallization for high-performance ferroelectric device applicationsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:c826b75a-dc5c-4420-8602-f7b2fc671e94Symplectic Elements at OxfordWiley2016Cho, YAhn, DPark, JPak, SLee, SJun, BHong, JLee, SJang, JHong, JMorris, SSohn, JCha, SKim, JThe ferroelectric β-phase in a poly(vinylidenefluoride-trifluoroethylene-chlorotrifluoroethylene) film is successfully formed using a room temperature solvent-annealing process and shows enhanced ferroelectricity compared to a thermally annealed film. Applications in electronics and energy are demonstrated with significantly enhanced device performances for a solvent annealing (SA) film employed devices compared to a thermal annealing film employed due to enhanced ferroelectricity of the SA film. |
| spellingShingle | Cho, Y Ahn, D Park, J Pak, S Lee, S Jun, B Hong, J Lee, S Jang, J Hong, J Morris, S Sohn, J Cha, S Kim, J Enhanced ferroelectric property of P(VDF-TrFE-CTFE) film using room temperature crystallization for high-performance ferroelectric device applications |
| title | Enhanced ferroelectric property of P(VDF-TrFE-CTFE) film using room temperature crystallization for high-performance ferroelectric device applications |
| title_full | Enhanced ferroelectric property of P(VDF-TrFE-CTFE) film using room temperature crystallization for high-performance ferroelectric device applications |
| title_fullStr | Enhanced ferroelectric property of P(VDF-TrFE-CTFE) film using room temperature crystallization for high-performance ferroelectric device applications |
| title_full_unstemmed | Enhanced ferroelectric property of P(VDF-TrFE-CTFE) film using room temperature crystallization for high-performance ferroelectric device applications |
| title_short | Enhanced ferroelectric property of P(VDF-TrFE-CTFE) film using room temperature crystallization for high-performance ferroelectric device applications |
| title_sort | enhanced ferroelectric property of p vdf trfe ctfe film using room temperature crystallization for high performance ferroelectric device applications |
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