Liao, X., Zou, J., Cockayne, D., Qin, J., Jiang, Z., Wang, X., & Leon, R. (1999). Strain relaxation by alloying effects in Ge islands grown on Si(001).
Citace podle Chicago (17th ed.)Liao, X., J. Zou, D. Cockayne, J. Qin, Z. Jiang, X. Wang, a R. Leon. Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001). 1999.
Citace podle MLA (9th ed.)Liao, X., et al. Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001). 1999.
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