Liao, X., Zou, J., Cockayne, D., Qin, J., Jiang, Z., Wang, X., & Leon, R. (1999). Strain relaxation by alloying effects in Ge islands grown on Si(001).
Chicago Style (17th ed.) CitationLiao, X., J. Zou, D. Cockayne, J. Qin, Z. Jiang, X. Wang, and R. Leon. Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001). 1999.
ציטוט MLALiao, X., et al. Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001). 1999.
אזהרה: ציטוטים אלה לעיתים לא מדויקים ב 100%.