APA ציטוט

Liao, X., Zou, J., Cockayne, D., Qin, J., Jiang, Z., Wang, X., & Leon, R. (1999). Strain relaxation by alloying effects in Ge islands grown on Si(001).

Chicago Style (17th ed.) Citation

Liao, X., J. Zou, D. Cockayne, J. Qin, Z. Jiang, X. Wang, and R. Leon. Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001). 1999.

ציטוט MLA

Liao, X., et al. Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001). 1999.

אזהרה: ציטוטים אלה לעיתים לא מדויקים ב 100%.