Liao, X., Zou, J., Cockayne, D., Qin, J., Jiang, Z., Wang, X., & Leon, R. (1999). Strain relaxation by alloying effects in Ge islands grown on Si(001).
शिकागो शैली (17वां संस्करण) प्रशस्ति पत्रLiao, X., J. Zou, D. Cockayne, J. Qin, Z. Jiang, X. Wang, और R. Leon. Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001). 1999.
एमएलए (9वां संस्करण) प्रशस्ति पत्रLiao, X., et al. Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001). 1999.
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