Liao, X., Zou, J., Cockayne, D., Qin, J., Jiang, Z., Wang, X., & Leon, R. (1999). Strain relaxation by alloying effects in Ge islands grown on Si(001).
Chicago Style (17th ed.) CitationLiao, X., J. Zou, D. Cockayne, J. Qin, Z. Jiang, X. Wang, and R. Leon. Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001). 1999.
MLA citiranjeLiao, X., et al. Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001). 1999.
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