Liao, X., Zou, J., Cockayne, D., Qin, J., Jiang, Z., Wang, X., & Leon, R. (1999). Strain relaxation by alloying effects in Ge islands grown on Si(001).
Chicago Style (17th ed.) CitationLiao, X., J. Zou, D. Cockayne, J. Qin, Z. Jiang, X. Wang, and R. Leon. Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001). 1999.
MLA引文Liao, X., et al. Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001). 1999.
警告:這些引文格式不一定是100%准確.