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Strain relaxation by alloying...
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Strain relaxation by alloying effects in Ge islands grown on Si(001)
Xehetasun bibliografikoak
Egile Nagusiak:
Liao, X
,
Zou, J
,
Cockayne, D
,
Qin, J
,
Jiang, Z
,
Wang, X
,
Leon, R
Formatua:
Journal article
Argitaratua:
1999
Aleari buruzko argibideak
Deskribapena
Antzeko izenburuak
MARC erregistroa
Deskribapena
Gaia:
Antzeko izenburuak
Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
nork: Liao, X, et al.
Argitaratua: (2001)
Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
nork: Merdzhanova T, et al.
Argitaratua: (2009-01-01)
[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
nork: Liao, X, et al.
Argitaratua: (2004)
Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
nork: Zou, J, et al.
Argitaratua: (2002)
Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
nork: Liao, X, et al.
Argitaratua: (2002)