Saltar ao contenido
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Idioma
Todos os campos
Title
Autor
Subject
Número de Clasificación
ISBN/ISSN
Tag
Buscar
Avanzado
Strain relaxation by alloying...
Citar
Text this
Enviar este rexistro por email
Imprimir
Exportar rexistro
Exportar a RefWorks
Exportar a EndNoteWeb
Exportar a EndNote
Permanent link
Strain relaxation by alloying effects in Ge islands grown on Si(001)
Detalles Bibliográficos
Main Authors:
Liao, X
,
Zou, J
,
Cockayne, D
,
Qin, J
,
Jiang, Z
,
Wang, X
,
Leon, R
Formato:
Journal article
Publicado:
1999
Existencias
Descripción
Títulos similares
Staff View
Descripción
Summary:
Títulos similares
Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
por: Liao, X, et al.
Publicado: (2001)
Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
por: Merdzhanova T, et al.
Publicado: (2009-01-01)
[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
por: Liao, X, et al.
Publicado: (2004)
Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
por: Zou, J, et al.
Publicado: (2002)
Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
por: Liao, X, et al.
Publicado: (2002)