Strain relaxation by alloying effects in Ge islands grown on Si(001)

Strain relaxation by alloying effects in Ge islands grown on Si(001)

书目详细资料
Main Authors:	Liao, X, Zou, J, Cockayne, D, Qin, J, Jiang, Z, Wang, X, Leon, R
格式:	Journal article
出版:	1999

相似书籍

Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
由: Liao, X, et al.
出版: (2001)

Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
由: Merdzhanova T, et al.
出版: (2009-01-01)

[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
由: Liao, X, et al.
出版: (2004)

Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
由: Zou, J, et al.
出版: (2002)

Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
由: Liao, X, et al.
出版: (2002)

Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation
由: Lang, C, et al.
出版: (2005)

Annealing effects on the microstructure of Ge/Si(001) quantum dots
由: Liao, X, et al.
出版: (2001)

Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
由: Liao, X, et al.
出版: (2000)

Nonuniform alloying in Ge(Si)/Si(001) quantum dots
由: Lang, C, et al.
出版: (2003)

Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping.
由: Lang, C, et al.
出版: (2006)

Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection
由: Cizhe Fang, et al.
出版: (2018-01-01)

Ordered GeSi nanorings grown on patterned Si (001) substrates
由: Ma Yingjie, et al.
出版: (2011-01-01)

Stress and relief of misfit strain of Ge/Si(001)
由: Wedler, G, et al.
出版: (1998)

Strain relaxation in SiGe/Si heteroepitaxy
由: Wong, Lydia Helena
出版: (2010)

The non-uniform composition profile in Ge(Si)/Si(001) quantum dots
由: Lang, C, et al.
出版: (2004)

Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
由: Goldfarb, I, et al.
出版: (1999)

Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
由: Walz, J, et al.
出版: (1999)

Ion irradiation of GeSi Si strained-layer heterostructures
由: Glasko, J, et al.
出版: (1999)

Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
由: Goldfarb, I, et al.
出版: (1997)

Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
由: Brehm M, et al.
出版: (2010-01-01)

MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates
由: Lee, Minjoo Lawrence, 1976-
出版: (2005)

Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature
由: Glasko, J, et al.
出版: (1998)

A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations
由: Yi-Ting Cheng, et al.
出版: (2022-04-01)

Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
由: Leon, R, et al.
出版: (2000)

Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
由: Bergamaschini R, et al.
出版: (2010-01-01)

Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
由: Brehm Moritz, et al.
出版: (2011-01-01)

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
由: Zou, J, et al.
出版: (1999)

The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
由: Glasko, J, et al.
出版: (1997)

Magnetic anisotropy of crystalline Fe films grown on (001) GaAs substrates using Ge buffer layers
由: Seul-Ki Bac, et al.
出版: (2016-05-01)

GeSi quantum dots: the effect of alloying on the shape transformation
由: Lang, C, et al.
出版: (2003)

Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates
由: R. Cariou, et al.
出版: (2014-07-01)

Competing growth mechanisms of Ge/Si(001) coherent clusters
由: Goldfarb, I, et al.
出版: (1997)

THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN [001] STRAINED-LAYER HETEROSTRUCTURES
由: Zou, J, et al.
出版: (1993)

Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
由: Polyzoeva, Evelina Aleksandrova
出版: (2011)

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
由: Jian-Huan Wang, et al.
出版: (2021-03-01)

Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
由: Aleksei V. Kolesnikov, et al.
出版: (2015-03-01)

Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
由: Vyacheslav A. Timofeev, et al.
出版: (2017-06-01)

Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
由: Ewa Dumiszewska, et al.
出版: (2022-06-01)

Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
由: Wedler, G, et al.
出版: (1998)

Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
由: Owen, J, et al.
出版: (1997)