Strain relaxation by alloying effects in Ge islands grown on Si(001)

Strain relaxation by alloying effects in Ge islands grown on Si(001)

Bibliografiske detaljer
Main Authors:	Liao, X, Zou, J, Cockayne, D, Qin, J, Jiang, Z, Wang, X, Leon, R
Format:	Journal article
Udgivet:	1999

Lignende værker

Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
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Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
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[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
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Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
af: Zou, J, et al.
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Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
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Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation
af: Lang, C, et al.
Udgivet: (2005)

Annealing effects on the microstructure of Ge/Si(001) quantum dots
af: Liao, X, et al.
Udgivet: (2001)

Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
af: Liao, X, et al.
Udgivet: (2000)

Nonuniform alloying in Ge(Si)/Si(001) quantum dots
af: Lang, C, et al.
Udgivet: (2003)

Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping.
af: Lang, C, et al.
Udgivet: (2006)

Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection
af: Cizhe Fang, et al.
Udgivet: (2018-01-01)

Ordered GeSi nanorings grown on patterned Si (001) substrates
af: Ma Yingjie, et al.
Udgivet: (2011-01-01)

Stress and relief of misfit strain of Ge/Si(001)
af: Wedler, G, et al.
Udgivet: (1998)

Strain relaxation in SiGe/Si heteroepitaxy
af: Wong, Lydia Helena
Udgivet: (2010)

The non-uniform composition profile in Ge(Si)/Si(001) quantum dots
af: Lang, C, et al.
Udgivet: (2004)

Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
af: Goldfarb, I, et al.
Udgivet: (1999)

Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
af: Walz, J, et al.
Udgivet: (1999)

Ion irradiation of GeSi Si strained-layer heterostructures
af: Glasko, J, et al.
Udgivet: (1999)

Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
af: Goldfarb, I, et al.
Udgivet: (1997)

Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
af: Brehm M, et al.
Udgivet: (2010-01-01)

MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates
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Udgivet: (2005)

Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature
af: Glasko, J, et al.
Udgivet: (1998)

A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations
af: Yi-Ting Cheng, et al.
Udgivet: (2022-04-01)

Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
af: Leon, R, et al.
Udgivet: (2000)

Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
af: Bergamaschini R, et al.
Udgivet: (2010-01-01)

Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
af: Brehm Moritz, et al.
Udgivet: (2011-01-01)

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
af: Zou, J, et al.
Udgivet: (1999)

The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
af: Glasko, J, et al.
Udgivet: (1997)

Magnetic anisotropy of crystalline Fe films grown on (001) GaAs substrates using Ge buffer layers
af: Seul-Ki Bac, et al.
Udgivet: (2016-05-01)

GeSi quantum dots: the effect of alloying on the shape transformation
af: Lang, C, et al.
Udgivet: (2003)

Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates
af: R. Cariou, et al.
Udgivet: (2014-07-01)

Competing growth mechanisms of Ge/Si(001) coherent clusters
af: Goldfarb, I, et al.
Udgivet: (1997)

THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN [001] STRAINED-LAYER HETEROSTRUCTURES
af: Zou, J, et al.
Udgivet: (1993)

Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
af: Polyzoeva, Evelina Aleksandrova
Udgivet: (2011)

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
af: Jian-Huan Wang, et al.
Udgivet: (2021-03-01)

Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
af: Aleksei V. Kolesnikov, et al.
Udgivet: (2015-03-01)

Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
af: Vyacheslav A. Timofeev, et al.
Udgivet: (2017-06-01)

Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
af: Ewa Dumiszewska, et al.
Udgivet: (2022-06-01)

Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
af: Wedler, G, et al.
Udgivet: (1998)

Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
af: Owen, J, et al.
Udgivet: (1997)