Strain relaxation by alloying effects in Ge islands grown on Si(001)

Strain relaxation by alloying effects in Ge islands grown on Si(001)

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Liao, X, Zou, J, Cockayne, D, Qin, J, Jiang, Z, Wang, X, Leon, R
Μορφή:	Journal article
Έκδοση:	1999

Παρόμοια τεκμήρια

Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
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Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
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[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
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Έκδοση: (2004)

Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
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Έκδοση: (2002)

Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
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Έκδοση: (2002)

Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation
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Έκδοση: (2005)

Annealing effects on the microstructure of Ge/Si(001) quantum dots
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Έκδοση: (2001)

Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
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Nonuniform alloying in Ge(Si)/Si(001) quantum dots
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Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping.
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Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection
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Έκδοση: (2018-01-01)

Ordered GeSi nanorings grown on patterned Si (001) substrates
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Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
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Ion irradiation of GeSi Si strained-layer heterostructures
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Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
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MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates
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A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations
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Έκδοση: (2022-04-01)

Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
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Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
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Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
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Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
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The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
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Magnetic anisotropy of crystalline Fe films grown on (001) GaAs substrates using Ge buffer layers
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Έκδοση: (2016-05-01)

GeSi quantum dots: the effect of alloying on the shape transformation
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Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates
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Competing growth mechanisms of Ge/Si(001) coherent clusters
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THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN [001] STRAINED-LAYER HETEROSTRUCTURES
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Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
ανά: Polyzoeva, Evelina Aleksandrova
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Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
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Έκδοση: (2021-03-01)

Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
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Έκδοση: (2015-03-01)

Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
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Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
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Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
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