Strain relaxation by alloying effects in Ge islands grown on Si(001)

Strain relaxation by alloying effects in Ge islands grown on Si(001)

Xehetasun bibliografikoak
Egile Nagusiak:	Liao, X, Zou, J, Cockayne, D, Qin, J, Jiang, Z, Wang, X, Leon, R
Formatua:	Journal article
Argitaratua:	1999

Antzeko izenburuak

Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
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Annealing effects on the microstructure of Ge/Si(001) quantum dots
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Nonuniform alloying in Ge(Si)/Si(001) quantum dots
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Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping.
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Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
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Ion irradiation of GeSi Si strained-layer heterostructures
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Magnetic anisotropy of crystalline Fe films grown on (001) GaAs substrates using Ge buffer layers
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Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates
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Competing growth mechanisms of Ge/Si(001) coherent clusters
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THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN [001] STRAINED-LAYER HETEROSTRUCTURES
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Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
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Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
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Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
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Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
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Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
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Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
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Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
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