Strain relaxation by alloying effects in Ge islands grown on Si(001)

Strain relaxation by alloying effects in Ge islands grown on Si(001)

ग्रंथसूची विवरण
मुख्य लेखकों:	Liao, X, Zou, J, Cockayne, D, Qin, J, Jiang, Z, Wang, X, Leon, R
स्वरूप:	Journal article
प्रकाशित:	1999

समान संसाधन

Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
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प्रकाशित: (2001)

Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
द्वारा: Merdzhanova T, और अन्य
प्रकाशित: (2009-01-01)

[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
द्वारा: Liao, X, और अन्य
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Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
द्वारा: Zou, J, और अन्य
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Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
द्वारा: Liao, X, और अन्य
प्रकाशित: (2002)

Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation
द्वारा: Lang, C, और अन्य
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Annealing effects on the microstructure of Ge/Si(001) quantum dots
द्वारा: Liao, X, और अन्य
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Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
द्वारा: Liao, X, और अन्य
प्रकाशित: (2000)

Nonuniform alloying in Ge(Si)/Si(001) quantum dots
द्वारा: Lang, C, और अन्य
प्रकाशित: (2003)

Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping.
द्वारा: Lang, C, और अन्य
प्रकाशित: (2006)

Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection
द्वारा: Cizhe Fang, और अन्य
प्रकाशित: (2018-01-01)

Ordered GeSi nanorings grown on patterned Si (001) substrates
द्वारा: Ma Yingjie, और अन्य
प्रकाशित: (2011-01-01)

Stress and relief of misfit strain of Ge/Si(001)
द्वारा: Wedler, G, और अन्य
प्रकाशित: (1998)

Strain relaxation in SiGe/Si heteroepitaxy
द्वारा: Wong, Lydia Helena
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The non-uniform composition profile in Ge(Si)/Si(001) quantum dots
द्वारा: Lang, C, और अन्य
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Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
द्वारा: Goldfarb, I, और अन्य
प्रकाशित: (1999)

Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
द्वारा: Walz, J, और अन्य
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Ion irradiation of GeSi Si strained-layer heterostructures
द्वारा: Glasko, J, और अन्य
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Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
द्वारा: Goldfarb, I, और अन्य
प्रकाशित: (1997)

Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
द्वारा: Brehm M, और अन्य
प्रकाशित: (2010-01-01)

MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates
द्वारा: Lee, Minjoo Lawrence, 1976-
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Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature
द्वारा: Glasko, J, और अन्य
प्रकाशित: (1998)

A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations
द्वारा: Yi-Ting Cheng, और अन्य
प्रकाशित: (2022-04-01)

Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
द्वारा: Leon, R, और अन्य
प्रकाशित: (2000)

Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
द्वारा: Bergamaschini R, और अन्य
प्रकाशित: (2010-01-01)

Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
द्वारा: Brehm Moritz, और अन्य
प्रकाशित: (2011-01-01)

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
द्वारा: Zou, J, और अन्य
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The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
द्वारा: Glasko, J, और अन्य
प्रकाशित: (1997)

Magnetic anisotropy of crystalline Fe films grown on (001) GaAs substrates using Ge buffer layers
द्वारा: Seul-Ki Bac, और अन्य
प्रकाशित: (2016-05-01)

GeSi quantum dots: the effect of alloying on the shape transformation
द्वारा: Lang, C, और अन्य
प्रकाशित: (2003)

Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates
द्वारा: R. Cariou, और अन्य
प्रकाशित: (2014-07-01)

Competing growth mechanisms of Ge/Si(001) coherent clusters
द्वारा: Goldfarb, I, और अन्य
प्रकाशित: (1997)

THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN [001] STRAINED-LAYER HETEROSTRUCTURES
द्वारा: Zou, J, और अन्य
प्रकाशित: (1993)

Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
द्वारा: Polyzoeva, Evelina Aleksandrova
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Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
द्वारा: Jian-Huan Wang, और अन्य
प्रकाशित: (2021-03-01)

Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
द्वारा: Aleksei V. Kolesnikov, और अन्य
प्रकाशित: (2015-03-01)

Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
द्वारा: Vyacheslav A. Timofeev, और अन्य
प्रकाशित: (2017-06-01)

Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
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Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
द्वारा: Wedler, G, और अन्य
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Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
द्वारा: Owen, J, और अन्य
प्रकाशित: (1997)