Strain relaxation by alloying effects in Ge islands grown on Si(001)

Strain relaxation by alloying effects in Ge islands grown on Si(001)

Bibliografski detalji
Glavni autori:	Liao, X, Zou, J, Cockayne, D, Qin, J, Jiang, Z, Wang, X, Leon, R
Format:	Journal article
Izdano:	1999

Slični predmeti

Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
od: Liao, X, i dr.
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Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
od: Merdzhanova T, i dr.
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[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
od: Liao, X, i dr.
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Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
od: Zou, J, i dr.
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Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
od: Liao, X, i dr.
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Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation
od: Lang, C, i dr.
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Annealing effects on the microstructure of Ge/Si(001) quantum dots
od: Liao, X, i dr.
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Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
od: Liao, X, i dr.
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Nonuniform alloying in Ge(Si)/Si(001) quantum dots
od: Lang, C, i dr.
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Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping.
od: Lang, C, i dr.
Izdano: (2006)

Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection
od: Cizhe Fang, i dr.
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Ordered GeSi nanorings grown on patterned Si (001) substrates
od: Ma Yingjie, i dr.
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Stress and relief of misfit strain of Ge/Si(001)
od: Wedler, G, i dr.
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Strain relaxation in SiGe/Si heteroepitaxy
od: Wong, Lydia Helena
Izdano: (2010)

The non-uniform composition profile in Ge(Si)/Si(001) quantum dots
od: Lang, C, i dr.
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Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
od: Goldfarb, I, i dr.
Izdano: (1999)

Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
od: Walz, J, i dr.
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Ion irradiation of GeSi Si strained-layer heterostructures
od: Glasko, J, i dr.
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Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
od: Goldfarb, I, i dr.
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Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
od: Brehm M, i dr.
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MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates
od: Lee, Minjoo Lawrence, 1976-
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Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature
od: Glasko, J, i dr.
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A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations
od: Yi-Ting Cheng, i dr.
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Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
od: Leon, R, i dr.
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Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
od: Bergamaschini R, i dr.
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Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
od: Brehm Moritz, i dr.
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Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
od: Zou, J, i dr.
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The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
od: Glasko, J, i dr.
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Magnetic anisotropy of crystalline Fe films grown on (001) GaAs substrates using Ge buffer layers
od: Seul-Ki Bac, i dr.
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GeSi quantum dots: the effect of alloying on the shape transformation
od: Lang, C, i dr.
Izdano: (2003)

Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates
od: R. Cariou, i dr.
Izdano: (2014-07-01)

Competing growth mechanisms of Ge/Si(001) coherent clusters
od: Goldfarb, I, i dr.
Izdano: (1997)

THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN [001] STRAINED-LAYER HETEROSTRUCTURES
od: Zou, J, i dr.
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Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
od: Polyzoeva, Evelina Aleksandrova
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Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
od: Jian-Huan Wang, i dr.
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Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
od: Aleksei V. Kolesnikov, i dr.
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Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
od: Vyacheslav A. Timofeev, i dr.
Izdano: (2017-06-01)

Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
od: Ewa Dumiszewska, i dr.
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Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
od: Wedler, G, i dr.
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Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
od: Owen, J, i dr.
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