Strain relaxation by alloying effects in Ge islands grown on Si(001)

Strain relaxation by alloying effects in Ge islands grown on Si(001)

Opis bibliograficzny
Główni autorzy:	Liao, X, Zou, J, Cockayne, D, Qin, J, Jiang, Z, Wang, X, Leon, R
Format:	Journal article
Wydane:	1999

Podobne zapisy

Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
od: Liao, X, i wsp.
Wydane: (2001)

Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
od: Merdzhanova T, i wsp.
Wydane: (2009-01-01)

[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
od: Liao, X, i wsp.
Wydane: (2004)

Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
od: Zou, J, i wsp.
Wydane: (2002)

Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
od: Liao, X, i wsp.
Wydane: (2002)

Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation
od: Lang, C, i wsp.
Wydane: (2005)

Annealing effects on the microstructure of Ge/Si(001) quantum dots
od: Liao, X, i wsp.
Wydane: (2001)

Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
od: Liao, X, i wsp.
Wydane: (2000)

Nonuniform alloying in Ge(Si)/Si(001) quantum dots
od: Lang, C, i wsp.
Wydane: (2003)

Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping.
od: Lang, C, i wsp.
Wydane: (2006)

Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection
od: Cizhe Fang, i wsp.
Wydane: (2018-01-01)

Ordered GeSi nanorings grown on patterned Si (001) substrates
od: Ma Yingjie, i wsp.
Wydane: (2011-01-01)

Stress and relief of misfit strain of Ge/Si(001)
od: Wedler, G, i wsp.
Wydane: (1998)

Strain relaxation in SiGe/Si heteroepitaxy
od: Wong, Lydia Helena
Wydane: (2010)

The non-uniform composition profile in Ge(Si)/Si(001) quantum dots
od: Lang, C, i wsp.
Wydane: (2004)

Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
od: Goldfarb, I, i wsp.
Wydane: (1999)

Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
od: Walz, J, i wsp.
Wydane: (1999)

Ion irradiation of GeSi Si strained-layer heterostructures
od: Glasko, J, i wsp.
Wydane: (1999)

Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
od: Goldfarb, I, i wsp.
Wydane: (1997)

Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
od: Brehm M, i wsp.
Wydane: (2010-01-01)

MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates
od: Lee, Minjoo Lawrence, 1976-
Wydane: (2005)

Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature
od: Glasko, J, i wsp.
Wydane: (1998)

A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations
od: Yi-Ting Cheng, i wsp.
Wydane: (2022-04-01)

Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
od: Leon, R, i wsp.
Wydane: (2000)

Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
od: Bergamaschini R, i wsp.
Wydane: (2010-01-01)

Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
od: Brehm Moritz, i wsp.
Wydane: (2011-01-01)

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
od: Zou, J, i wsp.
Wydane: (1999)

The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
od: Glasko, J, i wsp.
Wydane: (1997)

Magnetic anisotropy of crystalline Fe films grown on (001) GaAs substrates using Ge buffer layers
od: Seul-Ki Bac, i wsp.
Wydane: (2016-05-01)

GeSi quantum dots: the effect of alloying on the shape transformation
od: Lang, C, i wsp.
Wydane: (2003)

Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates
od: R. Cariou, i wsp.
Wydane: (2014-07-01)

Competing growth mechanisms of Ge/Si(001) coherent clusters
od: Goldfarb, I, i wsp.
Wydane: (1997)

THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN [001] STRAINED-LAYER HETEROSTRUCTURES
od: Zou, J, i wsp.
Wydane: (1993)

Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
od: Polyzoeva, Evelina Aleksandrova
Wydane: (2011)

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
od: Jian-Huan Wang, i wsp.
Wydane: (2021-03-01)

Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
od: Aleksei V. Kolesnikov, i wsp.
Wydane: (2015-03-01)

Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
od: Vyacheslav A. Timofeev, i wsp.
Wydane: (2017-06-01)

Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
od: Ewa Dumiszewska, i wsp.
Wydane: (2022-06-01)

Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
od: Wedler, G, i wsp.
Wydane: (1998)

Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
od: Owen, J, i wsp.
Wydane: (1997)