Strain relaxation by alloying effects in Ge islands grown on Si(001)

Strain relaxation by alloying effects in Ge islands grown on Si(001)

Detalhes bibliográficos
Principais autores:	Liao, X, Zou, J, Cockayne, D, Qin, J, Jiang, Z, Wang, X, Leon, R
Formato:	Journal article
Publicado em:	1999

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