Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Jezik
Vsa polja
Naslov
Avtor
Tema
Signatura
ISBN/ISSN
Oznaka
Išči
Napredno
Strain relaxation by alloying...
Citiraj
Pošljite SMS
Pošljite email
Natisni
Izvozi zadetek
Izvozi v RefWorks
Izvozi v EndNoteWeb
Izvozi v EndNote
Permanent link
Strain relaxation by alloying effects in Ge islands grown on Si(001)
Bibliografske podrobnosti
Main Authors:
Liao, X
,
Zou, J
,
Cockayne, D
,
Qin, J
,
Jiang, Z
,
Wang, X
,
Leon, R
Format:
Journal article
Izdano:
1999
Zaloga
Opis
Podobne knjige/članki
Knjižničarski pogled
Podobne knjige/članki
Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
od: Liao, X, et al.
Izdano: (2001)
Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
od: Merdzhanova T, et al.
Izdano: (2009-01-01)
[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
od: Liao, X, et al.
Izdano: (2004)
Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
od: Zou, J, et al.
Izdano: (2002)
Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
od: Liao, X, et al.
Izdano: (2002)