Hoppa till innehåll
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Språk
Alla fält
Titel
Upphovsman
Ämne
Signum
ISBN/ISSN
Tagg
Sök
Avancerad
Strain relaxation by alloying...
Hänvisa
Textmeddelande
Skicka per e-post
Skriv ut
Exportera posten
Exportera till: RefWorks
Exportera till: EndNoteWeb
Exportera till: EndNote
Permanent länk
Strain relaxation by alloying effects in Ge islands grown on Si(001)
Bibliografiska uppgifter
Huvudupphovsmän:
Liao, X
,
Zou, J
,
Cockayne, D
,
Qin, J
,
Jiang, Z
,
Wang, X
,
Leon, R
Materialtyp:
Journal article
Publicerad:
1999
Beståndsuppgifter
Beskrivning
Liknande verk
Katalogiseringsuppgifter
Liknande verk
Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
av: Liao, X, et al.
Publicerad: (2001)
Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
av: Merdzhanova T, et al.
Publicerad: (2009-01-01)
[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
av: Liao, X, et al.
Publicerad: (2004)
Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
av: Zou, J, et al.
Publicerad: (2002)
Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
av: Liao, X, et al.
Publicerad: (2002)