TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENT OF CARRIER TRAPPING TIME OF INGAAS/INP QUANTUM WELLS
We have measured the diffusion and trapping of photoexcited hot carriers in a InGaAs/InP heterostructure using an optical time-of-flight technique with picosecond time resolution. The efficiency of trapping of carriers into the well is found to increase rapidly between 4 K and room temperature. A me...
| Váldodahkkit: | , , , |
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| Materiálatiipa: | Journal article |
| Giella: | English |
| Almmustuhtton: |
1988
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| Čoahkkáigeassu: | We have measured the diffusion and trapping of photoexcited hot carriers in a InGaAs/InP heterostructure using an optical time-of-flight technique with picosecond time resolution. The efficiency of trapping of carriers into the well is found to increase rapidly between 4 K and room temperature. A mean trapping time of 4 ps is measured for a 50 Å well. © 1987. |
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