TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENT OF CARRIER TRAPPING TIME OF INGAAS/INP QUANTUM WELLS

TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENT OF CARRIER TRAPPING TIME OF INGAAS/INP QUANTUM WELLS

We have measured the diffusion and trapping of photoexcited hot carriers in a InGaAs/InP heterostructure using an optical time-of-flight technique with picosecond time resolution. The efficiency of trapping of carriers into the well is found to increase rapidly between 4 K and room temperature. A me...

Bibliografiset tiedot
Päätekijät:	Westland, D, Mihailovic, D, Ryan, J, Scott, M
Aineistotyyppi:	Journal article
Kieli:	English
Julkaistu:	1988

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