TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENT OF CARRIER TRAPPING TIME OF INGAAS/INP QUANTUM WELLS
We have measured the diffusion and trapping of photoexcited hot carriers in a InGaAs/InP heterostructure using an optical time-of-flight technique with picosecond time resolution. The efficiency of trapping of carriers into the well is found to increase rapidly between 4 K and room temperature. A me...
मुख्य लेखकों: | Westland, D, Mihailovic, D, Ryan, J, Scott, M |
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स्वरूप: | Journal article |
भाषा: | English |
प्रकाशित: |
1988
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समान संसाधन
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OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE
द्वारा: Westland, D, और अन्य
प्रकाशित: (1987) -
HOT CARRIER ENERGY-LOSS RATES IN GAINAS/INP QUANTUM WELLS
द्वारा: Westland, D, और अन्य
प्रकाशित: (1988) -
Photoluminescence of ingaas/inp grown by molecular beam epitaxy
द्वारा: Harmand Jean Christophe, और अन्य
प्रकाशित: (2004-01-01) -
TIME-RESOLVED PHOTOLUMINESCENCE FOR QUANTUM WELL SEMICONDUCTOR HETEROSTRUCTURES
द्वारा: Ryan, J
प्रकाशित: (1985) -
Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
द्वारा: Ying Wang, और अन्य
प्रकाशित: (2017-03-01)