Breakdown of the quantum Hall effect in an electron-hole system
We examine the edge states picture as applied to the electron-hole system, and show that compensated quantum Hall states are fundamentally different to quantum Hall states of single carrier type systems. Measurements of their current driven breakdown are described, and we show that these states have...
Үндсэн зохиолчид: | Takashina, K, Nicholas, R, Kardynal, B, Mason, N, Maude, D, Portal, J |
---|---|
Формат: | Conference item |
Хэвлэсэн: |
2001
|
Ижил төстэй зүйлс
-
The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown
-н: Takashina, K, зэрэг
Хэвлэсэн: (2002) -
Current-driven breakdown of the quantized Hall states of a broken-gap 2D electron-hole system
-н: Takashina, K, зэрэг
Хэвлэсэн: (2006) -
Quantum Hall and insulating states of a 2-D electron-hole system
-н: Takashina, K, зэрэг
Хэвлэсэн: (2003) -
Edge effects in an insulating state of an electron-hole system in magnetic field
-н: Takashina, K, зэрэг
Хэвлэсэн: (2001) -
Insulating states of a broken-gap two-dimensional electron-hole system
-н: Takashina, K, зэрэг
Хэвлэсэн: (2003)