Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and V/III ratio of 350. Zinc-blende (ZB) or wurtzi...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron:	Paiman, S, Gao, Q, Joyce, H, Tan, H, Jagadish, C, Kim, Y, Guo, Y, Zou, J
Fformat:	Conference item
Cyhoeddwyd:	2010

Eitemau Tebyg

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
gan: Paiman, S, et al.
Cyhoeddwyd: (2010)

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires.
gan: Paiman, Suriati, et al.
Cyhoeddwyd: (2010)

III-V compound semiconductor nanowires
gan: Paiman, S, et al.
Cyhoeddwyd: (2009)

III-V compound semiconductor nanowires
gan: Joyce, H, et al.
Cyhoeddwyd: (2009)

Influence of growth temperature and V/III ratio on Au-assisted In xGa1-xAs nanowires
gan: Ameruddin, A, et al.
Cyhoeddwyd: (2012)

Understanding the true shape of Au-catalyzed GaAs nanowires.
gan: Jiang, N, et al.
Cyhoeddwyd: (2014)

Effects of growth rate on InP nanowires morphology and crystal structure
gan: Paiman, Suriati, et al.
Cyhoeddwyd: (2013)

Quantum confinement of excitons in wurtzite InP nanowires
gan: Pemasiri, K, et al.
Cyhoeddwyd: (2015)

Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition
gan: Joyce, H, et al.
Cyhoeddwyd: (2007)

Growth of InP nanowires on silicon using a thin buffer layer
gan: Fonseka, H, et al.
Cyhoeddwyd: (2012)

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
gan: Mishra, A, et al.
Cyhoeddwyd: (2007)

III-V compound semiconductor nanowires for optoelectronic device applications
gan: Gao, Q, et al.
Cyhoeddwyd: (2011)

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
gan: Gao, Q, et al.
Cyhoeddwyd: (2009)

Structural and optical properties of III-V nanowires and nanowire heterostructures grown by metalorganic chemical vapour deposition
gan: Joyce, H, et al.
Cyhoeddwyd: (2007)

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.
gan: Joyce, H, et al.
Cyhoeddwyd: (2012)

III-V nanowires for optoelectronic applications
gan: Tan, H, et al.
Cyhoeddwyd: (2013)

Growth, structural and optical properties of III-V nanowires for optoelectronic applications
gan: Joyce, H, et al.
Cyhoeddwyd: (2007)

Optical properties of single InP and GaAs nanowire heterostructures
gan: Jackson, H, et al.
Cyhoeddwyd: (2008)

Growth mechanism of truncated triangular III-V nanowires.
gan: Zou, J, et al.
Cyhoeddwyd: (2007)

Nonlinear optical processes in optically trapped InP nanowires
gan: Wang, Fan, et al.
Cyhoeddwyd: (2011)

InP nanowires grown by SA-MOVPE
gan: Gao, Q, et al.
Cyhoeddwyd: (2012)

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.
gan: Titova, L, et al.
Cyhoeddwyd: (2007)

Growth of InP nanowires on silicon using a thin buffer layer
gan: Fonseka, H. Aruni, et al.
Cyhoeddwyd: (2012)

III-V semiconductor nanowires for optoelectronic device applications
gan: Joyce, H, et al.
Cyhoeddwyd: (2011)

III-V semiconductor nanowires for optoelectronic device applications
gan: Joyce, H, et al.
Cyhoeddwyd: (2011)

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
gan: Joyce, H, et al.
Cyhoeddwyd: (2013)

III-V nanowires for optoelectronic applications
gan: Tan, H, et al.
Cyhoeddwyd: (2012)

Carrier thermalization dynamics in single zincblende and wurtzite InP nanowires
gan: Wang, Yuda, et al.
Cyhoeddwyd: (2014)

Unexpected benefits of rapid growth rate for III-V nanowires.
gan: Joyce, H, et al.
Cyhoeddwyd: (2009)

Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions.
gan: Yong, C, et al.
Cyhoeddwyd: (2013)

Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
gan: Peng, K, et al.
Cyhoeddwyd: (2016)

Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.
gan: Joyce, H, et al.
Cyhoeddwyd: (2010)

Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy
gan: Joyce, H, et al.
Cyhoeddwyd: (2013)

III-V semiconductor nanowires for optoelectronic device applications
gan: Mokkapati, S, et al.
Cyhoeddwyd: (2013)

Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition
gan: Joyce, H, et al.
Cyhoeddwyd: (2006)

Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
gan: Paladugu, M, et al.
Cyhoeddwyd: (2009)

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires
gan: Jiang, N, et al.
Cyhoeddwyd: (2012)

An ultrafast switchable terahertz polarization modulator based on III--V semiconductor nanowires
gan: Baig, S, et al.
Cyhoeddwyd: (2017)

Phase separation induced by Au catalysts in ternary InGaAs nanowires.
gan: Guo, Y, et al.
Cyhoeddwyd: (2013)

Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.
gan: Joyce, H, et al.
Cyhoeddwyd: (2007)