Photoluminescence of GaAs/AlGaAs heterojunctions in magnetic fields up to 50 T
We report measurements of photo-luminescence from GaAs/AlGaAs heterojunctions in the ultra-quantum limit. New features are observed for low electron densities at high magnetic field, which we suggest are associated with the formation of negatively charged excitons, both singlet and triplet states. T...
Main Authors: | Priest, A, Nicholas, R, Cheng, H, Van der Burgt, M, Harris, J, Foxon, C |
---|---|
Format: | Conference item |
Published: |
1998
|
Similar Items
-
Magneto-photoluminescence of GaAs/AlGaAs heterojunctions under hydrostatic pressure
by: Priest, A, et al.
Published: (1998) -
Simulations of AlGaAs/GaAs heterojunction phototransistors
by: Ściana Beata, et al.
Published: (2011-08-01) -
Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction
by: Takuya Kawazu
Published: (2024-12-01) -
Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
by: Smith, L, et al.
Published: (2007) -
Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)
by: Wang, Hong
Published: (2009)