Conduction mechanism of nitronyl-nitroxide molecular magnetic compounds

We investigate the conduction mechanisms of nitronyl-nitroxide (NIT) molecular radicals, as useful for the creation of nanoscopic molecular spintronic devices, finding that it does not correspond to standard Mott behavior, as previously postulated. We provide a complete investigation using transport...

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Main Authors: Dotti, N, Heintze, E, Slota, M, Huebner, R, Wang, F, Nuss, J, Dressel, M, Bogani, L
Format: Journal article
Published: American Physical Society 2016
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author Dotti, N
Heintze, E
Slota, M
Huebner, R
Wang, F
Nuss, J
Dressel, M
Bogani, L
author_facet Dotti, N
Heintze, E
Slota, M
Huebner, R
Wang, F
Nuss, J
Dressel, M
Bogani, L
author_sort Dotti, N
collection OXFORD
description We investigate the conduction mechanisms of nitronyl-nitroxide (NIT) molecular radicals, as useful for the creation of nanoscopic molecular spintronic devices, finding that it does not correspond to standard Mott behavior, as previously postulated. We provide a complete investigation using transport measurements, low-energy, sub-THz spectroscopy and introducing differently substituted phenyl appendages. We show that a nontrivial surface-chargelimited regime is present in addition to the standard low-voltage Ohmic conductance. Scaling analysis allows one to determine all the main transport parameters for the compounds and highlights the presence of charge-trapping effects. Comparison among the different compounds shows the relevance of intermolecular stacking between the aromatic ring of the phenyl appendix and the NIT motif in the creation of useful electron transport channels. The importance of intermolecular pathways is further highlighted by electronic structure calculations, which clarify the nature of the electronic channels and their effect on the Mott character of the compounds.
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spelling oxford-uuid:caba763a-287a-46b4-9993-ba5dc45de2ae2022-03-27T07:09:29ZConduction mechanism of nitronyl-nitroxide molecular magnetic compoundsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:caba763a-287a-46b4-9993-ba5dc45de2aeSymplectic Elements at OxfordAmerican Physical Society2016Dotti, NHeintze, ESlota, MHuebner, RWang, FNuss, JDressel, MBogani, LWe investigate the conduction mechanisms of nitronyl-nitroxide (NIT) molecular radicals, as useful for the creation of nanoscopic molecular spintronic devices, finding that it does not correspond to standard Mott behavior, as previously postulated. We provide a complete investigation using transport measurements, low-energy, sub-THz spectroscopy and introducing differently substituted phenyl appendages. We show that a nontrivial surface-chargelimited regime is present in addition to the standard low-voltage Ohmic conductance. Scaling analysis allows one to determine all the main transport parameters for the compounds and highlights the presence of charge-trapping effects. Comparison among the different compounds shows the relevance of intermolecular stacking between the aromatic ring of the phenyl appendix and the NIT motif in the creation of useful electron transport channels. The importance of intermolecular pathways is further highlighted by electronic structure calculations, which clarify the nature of the electronic channels and their effect on the Mott character of the compounds.
spellingShingle Dotti, N
Heintze, E
Slota, M
Huebner, R
Wang, F
Nuss, J
Dressel, M
Bogani, L
Conduction mechanism of nitronyl-nitroxide molecular magnetic compounds
title Conduction mechanism of nitronyl-nitroxide molecular magnetic compounds
title_full Conduction mechanism of nitronyl-nitroxide molecular magnetic compounds
title_fullStr Conduction mechanism of nitronyl-nitroxide molecular magnetic compounds
title_full_unstemmed Conduction mechanism of nitronyl-nitroxide molecular magnetic compounds
title_short Conduction mechanism of nitronyl-nitroxide molecular magnetic compounds
title_sort conduction mechanism of nitronyl nitroxide molecular magnetic compounds
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