The role of atomic scale investigation in the development of nanoscale materials for information storage applications.
It is well established that the response of devices based on the giant magnetoresistance (GMR) effect depends critically on film microstructure, with parameters such as interfacial abruptness, the roughness and waviness of the layers, and grain size being crucial. Such devices have applications in i...
| Main Authors: | , , , , , , , |
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| Format: | Conference item |
| Published: |
2004
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