On the locking of dislocations by oxygen in silicon

On the locking of dislocations by oxygen in silicon

Locking of dislocations by oxygen atoms in Czochralski silicon has been investigated both experimentally and theoretically. Experiments were performed at annealing temperatures between 700 and 850°C for different annealing times and different oxygen concentrations. These showed five distinct regimes...

Полное описание

Библиографические подробности
Главные авторы:	Senkader, S, Jurkschat, K, Gambaro, D, Falster, R, Wilshaw, P
Формат:	Journal article
Язык:	English
Опубликовано:	2001

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