On the locking of dislocations by oxygen in silicon
Locking of dislocations by oxygen atoms in Czochralski silicon has been investigated both experimentally and theoretically. Experiments were performed at annealing temperatures between 700 and 850°C for different annealing times and different oxygen concentrations. These showed five distinct regimes...
| Những tác giả chính: | , , , , |
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| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
2001
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