Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices

Transmission electron microscopy (TEM) and photoluminescence (PL) were used to study metal organic vapour phase epitaxy (MOVPE) self-assembled InSb quantum dots (QDs) grown for the first time in InAs and GaSb matrices. Coherently strained InSb QDs were observed in the InAs matrix sample with a numbe...

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Main Authors: Norman, A, Mason, N, Fisher, M, Richardson, J, Krier, A, Walker, P, Booker, G
Format: Conference item
Published: 1997
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author Norman, A
Mason, N
Fisher, M
Richardson, J
Krier, A
Walker, P
Booker, G
author_facet Norman, A
Mason, N
Fisher, M
Richardson, J
Krier, A
Walker, P
Booker, G
author_sort Norman, A
collection OXFORD
description Transmission electron microscopy (TEM) and photoluminescence (PL) were used to study metal organic vapour phase epitaxy (MOVPE) self-assembled InSb quantum dots (QDs) grown for the first time in InAs and GaSb matrices. Coherently strained InSb QDs were observed in the InAs matrix sample with a number density approximate to 3x10(9) cm(-2) and diameter 5-10 nn. PL emission was obtained at 3.5 mu m, the longest wavelength yet reported for self-assembled semiconductor QDs. Coherently strained InSb QDs were also observed in the GaSb matrix sample together with larger relaxed InSb islands.
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spelling oxford-uuid:cc47982f-f00d-47c4-b742-8222794b78432022-03-27T07:20:44ZStructural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matricesConference itemhttp://purl.org/coar/resource_type/c_5794uuid:cc47982f-f00d-47c4-b742-8222794b7843Symplectic Elements at Oxford1997Norman, AMason, NFisher, MRichardson, JKrier, AWalker, PBooker, GTransmission electron microscopy (TEM) and photoluminescence (PL) were used to study metal organic vapour phase epitaxy (MOVPE) self-assembled InSb quantum dots (QDs) grown for the first time in InAs and GaSb matrices. Coherently strained InSb QDs were observed in the InAs matrix sample with a number density approximate to 3x10(9) cm(-2) and diameter 5-10 nn. PL emission was obtained at 3.5 mu m, the longest wavelength yet reported for self-assembled semiconductor QDs. Coherently strained InSb QDs were also observed in the GaSb matrix sample together with larger relaxed InSb islands.
spellingShingle Norman, A
Mason, N
Fisher, M
Richardson, J
Krier, A
Walker, P
Booker, G
Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
title Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
title_full Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
title_fullStr Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
title_full_unstemmed Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
title_short Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
title_sort structural and optical characterisation of movpe self assembled insb quantum dots in inas and gasb matrices
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