Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
Transmission electron microscopy (TEM) and photoluminescence (PL) were used to study metal organic vapour phase epitaxy (MOVPE) self-assembled InSb quantum dots (QDs) grown for the first time in InAs and GaSb matrices. Coherently strained InSb QDs were observed in the InAs matrix sample with a numbe...
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1997
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author | Norman, A Mason, N Fisher, M Richardson, J Krier, A Walker, P Booker, G |
author_facet | Norman, A Mason, N Fisher, M Richardson, J Krier, A Walker, P Booker, G |
author_sort | Norman, A |
collection | OXFORD |
description | Transmission electron microscopy (TEM) and photoluminescence (PL) were used to study metal organic vapour phase epitaxy (MOVPE) self-assembled InSb quantum dots (QDs) grown for the first time in InAs and GaSb matrices. Coherently strained InSb QDs were observed in the InAs matrix sample with a number density approximate to 3x10(9) cm(-2) and diameter 5-10 nn. PL emission was obtained at 3.5 mu m, the longest wavelength yet reported for self-assembled semiconductor QDs. Coherently strained InSb QDs were also observed in the GaSb matrix sample together with larger relaxed InSb islands. |
first_indexed | 2024-03-07T04:24:52Z |
format | Conference item |
id | oxford-uuid:cc47982f-f00d-47c4-b742-8222794b7843 |
institution | University of Oxford |
last_indexed | 2024-03-07T04:24:52Z |
publishDate | 1997 |
record_format | dspace |
spelling | oxford-uuid:cc47982f-f00d-47c4-b742-8222794b78432022-03-27T07:20:44ZStructural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matricesConference itemhttp://purl.org/coar/resource_type/c_5794uuid:cc47982f-f00d-47c4-b742-8222794b7843Symplectic Elements at Oxford1997Norman, AMason, NFisher, MRichardson, JKrier, AWalker, PBooker, GTransmission electron microscopy (TEM) and photoluminescence (PL) were used to study metal organic vapour phase epitaxy (MOVPE) self-assembled InSb quantum dots (QDs) grown for the first time in InAs and GaSb matrices. Coherently strained InSb QDs were observed in the InAs matrix sample with a number density approximate to 3x10(9) cm(-2) and diameter 5-10 nn. PL emission was obtained at 3.5 mu m, the longest wavelength yet reported for self-assembled semiconductor QDs. Coherently strained InSb QDs were also observed in the GaSb matrix sample together with larger relaxed InSb islands. |
spellingShingle | Norman, A Mason, N Fisher, M Richardson, J Krier, A Walker, P Booker, G Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices |
title | Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices |
title_full | Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices |
title_fullStr | Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices |
title_full_unstemmed | Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices |
title_short | Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices |
title_sort | structural and optical characterisation of movpe self assembled insb quantum dots in inas and gasb matrices |
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