Band offsets at the Si/SiO2 interface from many-body perturbation theory.

Band offsets at the Si/SiO2 interface from many-body perturbation theory.

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We use many-body perturbation theory, the state-of-the-art method for band-gap calculations, to compute the band offsets at the Si/SiO2 interface. We examine the adequacy of the usual approximations in this context. We show that (i) the separate treatment of band structure and potential lineup contr...

Bibliografiset tiedot
Päätekijät:	Shaltaf, R, Rignanese, G, Gonze, X, Giustino, F, Pasquarello, A
Aineistotyyppi:	Journal article
Kieli:	English
Julkaistu:	2008

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