Band offsets at the Si/SiO2 interface from many-body perturbation theory.

Band offsets at the Si/SiO2 interface from many-body perturbation theory.

Mostra altre versioni (1)

We use many-body perturbation theory, the state-of-the-art method for band-gap calculations, to compute the band offsets at the Si/SiO2 interface. We examine the adequacy of the usual approximations in this context. We show that (i) the separate treatment of band structure and potential lineup contr...

Descrizione completa

Dettagli Bibliografici
Autori principali:	Shaltaf, R, Rignanese, G, Gonze, X, Giustino, F, Pasquarello, A
Natura:	Journal article
Lingua:	English
Pubblicazione:	2008

Documenti analoghi

Band offsets at the Si/SiO2 interface from many-body perturbation theory
di: Shaltaf, R, et al.
Pubblicazione: (2008)

Atomic-scale modelling of the Si(100)-SiO(2) interface
di: Giustino, F, et al.
Pubblicazione: (2005)

Electronic structure at realistic Si(100)-SiO2 interfaces
di: Giustino, F, et al.
Pubblicazione: (2004)

Abrupt model interface for the 4H(1000)SiC-SiO2 interface
di: Devynck, F, et al.
Pubblicazione: (2005)

Infrared spectra at surfaces and interfaces from first principles: evolution of the spectra across the Si(100)-SiO2 interface.
di: Giustino, F, et al.
Pubblicazione: (2005)

Proton-induced fixed positive charge at the Si(100)-SiO2 interface.
di: Godet, J, et al.
Pubblicazione: (2007)

Atomistic models of the Si(100)-SiO(2) interface: structural, electronic and dielectric properties
di: Giustino, F, et al.
Pubblicazione: (2005)

Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties
di: Devynck, F, et al.
Pubblicazione: (2007)

Atomistic model of the 4H(0001)SiC-SiO2 interface: Structural and electronic properties
di: Devynck, F, et al.
Pubblicazione: (2007)

Modeling of Si 2p core-level shifts at Si-(ZrO(2))(x)(SiO(2))(1-x) interfaces
di: Giustino, F, et al.
Pubblicazione: (2002)

Dielectric and infrared properties of ultrathin SiO2 layers on Si(100)
di: Giustino, F, et al.
Pubblicazione: (2006)

Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides
di: Giustino, F, et al.
Pubblicazione: (2004)

Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations
di: Devynck, F, et al.
Pubblicazione: (2007)

First-principles theory of infrared absorption spectra at surfaces and interfaces: Application to the Si(100): H(2)O surface
di: Giustino, F, et al.
Pubblicazione: (2008)

Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface
di: Efi Dwi Indari, et al.
Pubblicazione: (2019-04-01)

High-Quality <i>SiO</i><sub>2</sub>/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry
di: Jesús Cañas, et al.
Pubblicazione: (2022-11-01)

Infrared properties of ultrathin oxides on Si(100)
di: Giustino, F, et al.
Pubblicazione: (2005)

Comparison of interfaces, band alignments, and tunneling currents between crystalline and amorphous silica in Si/SiO2/Si structures
di: Eunjung Ko, et al.
Pubblicazione: (2022-01-01)

Band-offset determination and excitons in SiGe/Si(001) quantum wells
di: Cheng, H, et al.
Pubblicazione: (2000)

Exciton formation dynamics at the SiO2/Si interface
di: Sergio Revuelta, et al.
Pubblicazione: (2023-11-01)

Theory of atomic-scale dielectric permittivity at insulator interfaces
di: Giustino, F, et al.
Pubblicazione: (2005)

On the Dependence of Band Alignment of SiO₂/Si Stack on SiO₂ Thickness: Extrinsic Or Intrinsic?
di: Yonggui Xu, et al.
Pubblicazione: (2020-01-01)

Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping
di: Shu-Han Hsu, et al.
Pubblicazione: (2021-01-01)

Impact of post-deposition annealing on SiO2/SiC interfaces formed by plasma nitridation of the SiC surface and SiO2 deposition
di: Hiroki Fujimoto, et al.
Pubblicazione: (2024-01-01)

Many-Body Perturbation Theories for Finite Nuclei
di: Alexander Tichai, et al.
Pubblicazione: (2020-06-01)

Padé resummation of many-body perturbation theories
di: Y. Pavlyukh
Pubblicazione: (2017-03-01)

SiO2/Si interface oxidation and defects in O2 plasma processing
di: Shota Nunomura, et al.
Pubblicazione: (2025-01-01)

Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon
di: Ladislav Harmatha, et al.
Pubblicazione: (2006-01-01)

Ultrahigh Vacuum Preparation and Passivation of Abrupt SiO2/Si(111) Interfaces
di: Bert Stegemann, et al.
Pubblicazione: (2007-12-01)

N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
di: Hironori Yoshioka, et al.
Pubblicazione: (2015-01-01)

Investigating the mechanism of SiO2/4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO2
di: Runze Wang, et al.
Pubblicazione: (2024-01-01)

The formation and evolution of SiO/SiO2 nanostructures /
di: 437818 Nurul Huda Abu Bakar, et al.
Pubblicazione: (2009)

Second harmonic generation and broad-band photoluminescence in mesoporous Si/SiO2 nanoparticles
di: Mastalieva Viktoriia, et al.
Pubblicazione: (2024-08-01)

BAND ALIGNMENT OF ULTRATHIN GIZO/SiO2/Si HETEROSTRUCTURE DETERMINED BY ELECTRON SPECTROSCOPY
di: Hee Jae Kang2, et al.
Pubblicazione: (2011-11-01)

Erratum: Padé resummation of many-body perturbation theories
di: Y. Pavlyukh
Pubblicazione: (2017-08-01)

Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission
di: I. Shlyakhov, et al.
Pubblicazione: (2018-02-01)

Charge injection at carbon nanotube-SiO2 interface
di: Ong, Hock Guan, et al.
Pubblicazione: (2011)

Patterning of SiO2 interfaces for radiative cooling applications
di: Zhenmin Ding, et al.
Pubblicazione: (2023-01-01)

Enhancement of confined femto-ablation at SiO2/Si interface by embedded metallic nanoparticles
di: Rehman, Zia Ur, et al.
Pubblicazione: (2018)

Ab initio calculation of silicon monovacancy defect in amorphous-SiO2/Si interface
di: Pei Yao, et al.
Pubblicazione: (2022-05-01)