Band offsets at the Si/SiO2 interface from many-body perturbation theory.

We use many-body perturbation theory, the state-of-the-art method for band-gap calculations, to compute the band offsets at the Si/SiO2 interface. We examine the adequacy of the usual approximations in this context. We show that (i) the separate treatment of band structure and potential lineup contr...

詳細記述

書誌詳細
主要な著者: Shaltaf, R, Rignanese, G, Gonze, X, Giustino, F, Pasquarello, A
フォーマット: Journal article
言語:English
出版事項: 2008