Growth of microscale In2O3 islands on Y-stabilized zirconia(100) by molecular beam epitaxy
The growth of micrometer sized arrays of InO islands on Y-stabilized ZrO(100) was investigated. Indium oxide layers were grown on Y-stabilized ZrO(100) substrates in a UHV oxide MBE system with a base pressure of 5 × 10 mbar and incorporating an indium Knudsen cell and a radiofrequency oxygen plasma...
| Glavni autori: | , , , , , , , |
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| Format: | Journal article |
| Izdano: |
2008
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| Sažetak: | The growth of micrometer sized arrays of InO islands on Y-stabilized ZrO(100) was investigated. Indium oxide layers were grown on Y-stabilized ZrO(100) substrates in a UHV oxide MBE system with a base pressure of 5 × 10 mbar and incorporating an indium Knudsen cell and a radiofrequency oxygen plasma source. Substrates were cleaned by exposure to the oxygen atom beam at a substrate temperature of 900 °C. Films were then grown to an estimated thickness of 120 nm with a deposition rate of 0.04 nm/s at a substrate temperature of 900 °C. The epitaxial relationship between the InO islands and the substrate is confirmed by selected area electron diffraction carried out in the HRTEM. It was observed that Y-stabilized ZrO is a versatile substrate whose lattice parameter varies with Y doping level, thus providing a means of varying the mismatch with InO epilayers. |
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