Growth of microscale In2O3 islands on Y-stabilized zirconia(100) by molecular beam epitaxy
The growth of micrometer sized arrays of InO islands on Y-stabilized ZrO(100) was investigated. Indium oxide layers were grown on Y-stabilized ZrO(100) substrates in a UHV oxide MBE system with a base pressure of 5 × 10 mbar and incorporating an indium Knudsen cell and a radiofrequency oxygen plasma...
| Main Authors: | , , , , , , , |
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| Format: | Journal article |
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2008
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| _version_ | 1826297046398664704 |
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| author | Bourlange, A Payne, D Jacobs, R Egdell, R Foord, J Schertel, A Dobson, P Hutchison, J |
| author_facet | Bourlange, A Payne, D Jacobs, R Egdell, R Foord, J Schertel, A Dobson, P Hutchison, J |
| author_sort | Bourlange, A |
| collection | OXFORD |
| description | The growth of micrometer sized arrays of InO islands on Y-stabilized ZrO(100) was investigated. Indium oxide layers were grown on Y-stabilized ZrO(100) substrates in a UHV oxide MBE system with a base pressure of 5 × 10 mbar and incorporating an indium Knudsen cell and a radiofrequency oxygen plasma source. Substrates were cleaned by exposure to the oxygen atom beam at a substrate temperature of 900 °C. Films were then grown to an estimated thickness of 120 nm with a deposition rate of 0.04 nm/s at a substrate temperature of 900 °C. The epitaxial relationship between the InO islands and the substrate is confirmed by selected area electron diffraction carried out in the HRTEM. It was observed that Y-stabilized ZrO is a versatile substrate whose lattice parameter varies with Y doping level, thus providing a means of varying the mismatch with InO epilayers. |
| first_indexed | 2024-03-07T04:25:38Z |
| format | Journal article |
| id | oxford-uuid:cc82e8c8-3e21-4696-89e9-73a89f4d68be |
| institution | University of Oxford |
| last_indexed | 2024-03-07T04:25:38Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | oxford-uuid:cc82e8c8-3e21-4696-89e9-73a89f4d68be2022-03-27T07:22:37ZGrowth of microscale In2O3 islands on Y-stabilized zirconia(100) by molecular beam epitaxyJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:cc82e8c8-3e21-4696-89e9-73a89f4d68beSymplectic Elements at Oxford2008Bourlange, APayne, DJacobs, REgdell, RFoord, JSchertel, ADobson, PHutchison, JThe growth of micrometer sized arrays of InO islands on Y-stabilized ZrO(100) was investigated. Indium oxide layers were grown on Y-stabilized ZrO(100) substrates in a UHV oxide MBE system with a base pressure of 5 × 10 mbar and incorporating an indium Knudsen cell and a radiofrequency oxygen plasma source. Substrates were cleaned by exposure to the oxygen atom beam at a substrate temperature of 900 °C. Films were then grown to an estimated thickness of 120 nm with a deposition rate of 0.04 nm/s at a substrate temperature of 900 °C. The epitaxial relationship between the InO islands and the substrate is confirmed by selected area electron diffraction carried out in the HRTEM. It was observed that Y-stabilized ZrO is a versatile substrate whose lattice parameter varies with Y doping level, thus providing a means of varying the mismatch with InO epilayers. |
| spellingShingle | Bourlange, A Payne, D Jacobs, R Egdell, R Foord, J Schertel, A Dobson, P Hutchison, J Growth of microscale In2O3 islands on Y-stabilized zirconia(100) by molecular beam epitaxy |
| title | Growth of microscale In2O3 islands on Y-stabilized zirconia(100) by molecular beam epitaxy |
| title_full | Growth of microscale In2O3 islands on Y-stabilized zirconia(100) by molecular beam epitaxy |
| title_fullStr | Growth of microscale In2O3 islands on Y-stabilized zirconia(100) by molecular beam epitaxy |
| title_full_unstemmed | Growth of microscale In2O3 islands on Y-stabilized zirconia(100) by molecular beam epitaxy |
| title_short | Growth of microscale In2O3 islands on Y-stabilized zirconia(100) by molecular beam epitaxy |
| title_sort | growth of microscale in2o3 islands on y stabilized zirconia 100 by molecular beam epitaxy |
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