An SEM EBIC study of the electronic properties of dislocations in silicon
<p>Individual, well structurally characterised dislocations present in n-type silicon have been studied using the electron beam induced current (EBIC) mode of an SEM.</p>An EBIC system has been designed and constructed which includes i) phase sensitive detection, ii) computerised contro...
| Hauptverfasser: | , |
|---|---|
| Weitere Verfasser: | |
| Format: | Abschlussarbeit |
| Sprache: | English |
| Veröffentlicht: |
1984
|
| Schlagworte: |