An SEM EBIC study of the electronic properties of dislocations in silicon

An SEM EBIC study of the electronic properties of dislocations in silicon

<p>Individual, well structurally characterised dislocations present in n-type silicon have been studied using the electron beam induced current (EBIC) mode of an SEM.</p>An EBIC system has been designed and constructed which includes i) phase sensitive detection, ii) computerised contro...

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Bibliografische gegevens
Hoofdauteurs:	Wilshaw, P, Wilshaw, Peter
Andere auteurs:	Ourmazd, A
Formaat:	Thesis
Taal:	English
Gepubliceerd in:	1984
Onderwerpen:	Dislocations in metals Defects Silicon Scanning electron microscopy

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