An SEM EBIC study of the electronic properties of dislocations in silicon

<p>Individual, well structurally characterised dislocations present in n-type silicon have been studied using the electron beam induced current (EBIC) mode of an SEM.</p>An EBIC system has been designed and constructed which includes i) phase sensitive detection, ii) computerised contro...

Cijeli opis

Bibliografski detalji
Glavni autori: Wilshaw, P, Wilshaw, Peter
Daljnji autori: Ourmazd, A
Format: Disertacija
Jezik:English
Izdano: 1984
Teme: