An SEM EBIC study of the electronic properties of dislocations in silicon
<p>Individual, well structurally characterised dislocations present in n-type silicon have been studied using the electron beam induced current (EBIC) mode of an SEM.</p>An EBIC system has been designed and constructed which includes i) phase sensitive detection, ii) computerised contro...
| Հիմնական հեղինակներ: | , |
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| Այլ հեղինակներ: | |
| Ձևաչափ: | Թեզիս |
| Լեզու: | English |
| Հրապարակվել է: |
1984
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| Խորագրեր: |