An SEM EBIC study of the electronic properties of dislocations in silicon

<p>Individual, well structurally characterised dislocations present in n-type silicon have been studied using the electron beam induced current (EBIC) mode of an SEM.</p>An EBIC system has been designed and constructed which includes i) phase sensitive detection, ii) computerised contro...

Olles dieđut

Bibliográfalaš dieđut
Váldodahkkit: Wilshaw, P, Wilshaw, Peter
Eará dahkkit: Ourmazd, A
Materiálatiipa: Oahppočájánas
Giella:English
Almmustuhtton: 1984
Fáttát: