An SEM EBIC study of the electronic properties of dislocations in silicon
<p>Individual, well structurally characterised dislocations present in n-type silicon have been studied using the electron beam induced current (EBIC) mode of an SEM.</p>An EBIC system has been designed and constructed which includes i) phase sensitive detection, ii) computerised contro...
| Những tác giả chính: | , |
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| Tác giả khác: | |
| Định dạng: | Luận văn |
| Ngôn ngữ: | English |
| Được phát hành: |
1984
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