TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE

TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE

Bibliografski detalji
Glavni autori:	Nicholas, R, Kressrogers, E, Portal, J, Galibert, J, Chevy, A
Format:	Journal article
Izdano:	1982

Slični predmeti

CYCLOTRON-RESONANCE STUDIES ON BULK AND TWO-DIMENSIONAL CONDUCTION ELECTRONS IN INSE
od: Kressrogers, E, i dr.
Izdano: (1982)

THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
od: Kressrogers, E, i dr.
Izdano: (1983)

THE ELECTRIC SUB-BAND STRUCTURE OF ELECTRON ACCUMULATION LAYERS IN INSE FROM SHUBINKOV-DEHAAS OSCILLATIONS AND INTER-SUB-BAND RESONANCE
od: Kressrogers, E, i dr.
Izdano: (1983)

TWO-DIMENSIONAL MAGNETOPOLARON COUPLING TO BOTH HOMOPOLAR AND LONGITUDINAL OPTIC PHONONS IN THE LAYER COMPOUND INSE
od: Howell, D, i dr.
Izdano: (1989)

Two-dimensional magnetopolaron coupling to both homopolar and longitudinal optic phonons in the layer compound InSe
od: Howell, D, i dr.
Izdano: (1989)

Electronic Structures of Twisted Bilayer InSe/InSe and Heterobilayer Graphene/InSe
od: Xiaojing Yao, i dr.
Izdano: (2021-05-01)

2D CYCLOTRON-RESONANCE AND MAGNETOPOLARON COUPLING TO HOMOPOLAR AND LO PHONONS IN THE LAYERED SEMICONDUCTOR INSE
od: Howell, D, i dr.
Izdano: (1990)

Dimensional crossover in the carrier mobility of two-dimensional semiconductors: the case of InSe
od: Li, W, i dr.
Izdano: (2019)

RESONANT MAGNETOPOLARON COUPLING TO BOTH POLAR AND NEUTRAL OPTICAL PHONONS IN THE LAYER COMPOUND INSE
od: Peeters, F, i dr.
Izdano: (1992)

Realization of Ultrahigh Strain Modulation in Two‐Dimensional β‐InSe Layers
od: Mingyan Liu, i dr.
Izdano: (2023-02-01)

TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS
od: Kressrogers, E, i dr.
Izdano: (1980)

Resonant magnetopolaron coupling to both polar and neutral optical phonons in the layer compound InSe
od: Peeters, F, i dr.
Izdano: (1992)

CYCLOTRON-RESONANCE OF BOTH MAGNETOPOLARON BRANCHES FOR POLAR AND NEUTRAL OPTIC-PHONON COUPLING IN THE LAYER COMPOUND INSE
od: Nicholas, R, i dr.
Izdano: (1992)

Formation and healing of defects in atomically thin GaSe and InSe
od: Hopkinson, DG, i dr.
Izdano: (2019)

Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE
od: Chia-Hsing Wu, i dr.
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ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS
od: Nicholas, R, i dr.
Izdano: (1980)

Atomic-scale mechanisms of defect- and light-induced oxidation and degradation of InSe
od: Kistanov, Andrey A., i dr.
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Defect and doping properties of sliding ferroelectric γ-InSe for photovoltaic applications
od: Zhiwei Lyu, i dr.
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Electronic Structure and I-V Characteristics of InSe Nanoribbons
od: A-Long Yao, i dr.
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Remote Phonon Scattering in Two-Dimensional InSe FETs with High-<i>κ</i> Gate Stack
od: Pengying Chang, i dr.
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Effect of the electron irradiation on electrical properties of n-InSe and their anisotropy
od: I. V. Mintyanskii, i dr.
Izdano: (2018-06-01)

Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
od: Yadong Zhang, i dr.
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Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy
od: Sheng-Wei Hsiao, i dr.
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Structure and Physical Properties of In2Se3{Mn}, InSe{Mn} and InSe{Fe} Layered Crystals
od: V. V. Kaminskii, i dr.
Izdano: (2016-03-01)

Plasmonic hot electron induced layer dependent anomalous Fröhlich interaction in InSe
od: Mahfujur Rahaman, i dr.
Izdano: (2021-07-01)

Modulating the Band Alignments of Two-Dimensional In2Se3/InSe Heterostructure via Ferroelectric Polarization and Interlayer Coupling
od: Yabing Du, i dr.
Izdano: (2022-04-01)

Modeling InSe phase-change materials
od: Kohary, K, i dr.
Izdano: (2004)

Insulating states of a broken-gap two-dimensional electron-hole system
od: Takashina, K, i dr.
Izdano: (2003)

HIGH MAGNETIC-FIELD STUDIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GALNAS-INP SUPER-LATTICES
od: Portal, J, i dr.
Izdano: (1983)

Haruan makan anak : inses di Semenanjung Malaysia /
od: 372595 Abd. Hadi Zakaria
Izdano: (1998)

Strain Effect on Thermoelectric Performance of InSe Monolayer
od: Qian Wang, i dr.
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Photoluminescence of BI2O3-inse heterojunctions
od: Evtodiev, Igor
Izdano: (2009-09-01)

Atomically thin photoanode of InSe/graphene heterostructure
od: Haihong Zheng, i dr.
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Structural and Electronic Properties of Cu<sub>3</sub>InSe<sub>4</sub>
od: Oluwagbemiga P. Ojo, i dr.
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SUBBAND-LANDAU LEVEL COUPLING IN A TWO-DIMENSIONAL ELECTRON-GAS IN TILTED MAGNETIC-FIELDS
od: Brummell, M, i dr.
Izdano: (1986)

Metal-insulator oscillations in a two-dimensional electron-hole system
od: Nicholas, R, i dr.
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Optical second harmonic generation in encapsulated single-layer InSe
od: Nadine Leisgang, i dr.
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Electrical and switching properties of InSe amorphous thin films/
od: Kenawy, M. A.

Structural and Optical Properties of Interfacial InSe Thin Film
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Optoelectronic properties of the InSe/Ga2S3 interfaces
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