TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE

TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE

Bibliografiset tiedot
Päätekijät:	Nicholas, R, Kressrogers, E, Portal, J, Galibert, J, Chevy, A
Aineistotyyppi:	Journal article
Julkaistu:	1982

Samankaltaisia teoksia

CYCLOTRON-RESONANCE STUDIES ON BULK AND TWO-DIMENSIONAL CONDUCTION ELECTRONS IN INSE
Tekijä: Kressrogers, E, et al.
Julkaistu: (1982)

THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
Tekijä: Kressrogers, E, et al.
Julkaistu: (1983)

THE ELECTRIC SUB-BAND STRUCTURE OF ELECTRON ACCUMULATION LAYERS IN INSE FROM SHUBINKOV-DEHAAS OSCILLATIONS AND INTER-SUB-BAND RESONANCE
Tekijä: Kressrogers, E, et al.
Julkaistu: (1983)

TWO-DIMENSIONAL MAGNETOPOLARON COUPLING TO BOTH HOMOPOLAR AND LONGITUDINAL OPTIC PHONONS IN THE LAYER COMPOUND INSE
Tekijä: Howell, D, et al.
Julkaistu: (1989)

Two-dimensional magnetopolaron coupling to both homopolar and longitudinal optic phonons in the layer compound InSe
Tekijä: Howell, D, et al.
Julkaistu: (1989)

Electronic Structures of Twisted Bilayer InSe/InSe and Heterobilayer Graphene/InSe
Tekijä: Xiaojing Yao, et al.
Julkaistu: (2021-05-01)

2D CYCLOTRON-RESONANCE AND MAGNETOPOLARON COUPLING TO HOMOPOLAR AND LO PHONONS IN THE LAYERED SEMICONDUCTOR INSE
Tekijä: Howell, D, et al.
Julkaistu: (1990)

Dimensional crossover in the carrier mobility of two-dimensional semiconductors: the case of InSe
Tekijä: Li, W, et al.
Julkaistu: (2019)

RESONANT MAGNETOPOLARON COUPLING TO BOTH POLAR AND NEUTRAL OPTICAL PHONONS IN THE LAYER COMPOUND INSE
Tekijä: Peeters, F, et al.
Julkaistu: (1992)

Realization of Ultrahigh Strain Modulation in Two‐Dimensional β‐InSe Layers
Tekijä: Mingyan Liu, et al.
Julkaistu: (2023-02-01)

TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS
Tekijä: Kressrogers, E, et al.
Julkaistu: (1980)

Resonant magnetopolaron coupling to both polar and neutral optical phonons in the layer compound InSe
Tekijä: Peeters, F, et al.
Julkaistu: (1992)

CYCLOTRON-RESONANCE OF BOTH MAGNETOPOLARON BRANCHES FOR POLAR AND NEUTRAL OPTIC-PHONON COUPLING IN THE LAYER COMPOUND INSE
Tekijä: Nicholas, R, et al.
Julkaistu: (1992)

Formation and healing of defects in atomically thin GaSe and InSe
Tekijä: Hopkinson, DG, et al.
Julkaistu: (2019)

Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE
Tekijä: Chia-Hsing Wu, et al.
Julkaistu: (2022-07-01)

ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS
Tekijä: Nicholas, R, et al.
Julkaistu: (1980)

Atomic-scale mechanisms of defect- and light-induced oxidation and degradation of InSe
Tekijä: Kistanov, Andrey A., et al.
Julkaistu: (2020)

Defect and doping properties of sliding ferroelectric γ-InSe for photovoltaic applications
Tekijä: Zhiwei Lyu, et al.
Julkaistu: (2024-03-01)

Electronic Structure and I-V Characteristics of InSe Nanoribbons
Tekijä: A-Long Yao, et al.
Julkaistu: (2018-04-01)

Remote Phonon Scattering in Two-Dimensional InSe FETs with High-<i>κ</i> Gate Stack
Tekijä: Pengying Chang, et al.
Julkaistu: (2018-12-01)

Effect of the electron irradiation on electrical properties of n-InSe and their anisotropy
Tekijä: I. V. Mintyanskii, et al.
Julkaistu: (2018-06-01)

Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
Tekijä: Yadong Zhang, et al.
Julkaistu: (2021-12-01)

Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy
Tekijä: Sheng-Wei Hsiao, et al.
Julkaistu: (2022-03-01)

Structure and Physical Properties of In2Se3{Mn}, InSe{Mn} and InSe{Fe} Layered Crystals
Tekijä: V. V. Kaminskii, et al.
Julkaistu: (2016-03-01)

Plasmonic hot electron induced layer dependent anomalous Fröhlich interaction in InSe
Tekijä: Mahfujur Rahaman, et al.
Julkaistu: (2021-07-01)

Modulating the Band Alignments of Two-Dimensional In2Se3/InSe Heterostructure via Ferroelectric Polarization and Interlayer Coupling
Tekijä: Yabing Du, et al.
Julkaistu: (2022-04-01)

Modeling InSe phase-change materials
Tekijä: Kohary, K, et al.
Julkaistu: (2004)

Insulating states of a broken-gap two-dimensional electron-hole system
Tekijä: Takashina, K, et al.
Julkaistu: (2003)

HIGH MAGNETIC-FIELD STUDIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GALNAS-INP SUPER-LATTICES
Tekijä: Portal, J, et al.
Julkaistu: (1983)

Haruan makan anak : inses di Semenanjung Malaysia /
Tekijä: 372595 Abd. Hadi Zakaria
Julkaistu: (1998)

Strain Effect on Thermoelectric Performance of InSe Monolayer
Tekijä: Qian Wang, et al.
Julkaistu: (2019-08-01)

Photoluminescence of BI2O3-inse heterojunctions
Tekijä: Evtodiev, Igor
Julkaistu: (2009-09-01)

Atomically thin photoanode of InSe/graphene heterostructure
Tekijä: Haihong Zheng, et al.
Julkaistu: (2021-01-01)

Structural and Electronic Properties of Cu<sub>3</sub>InSe<sub>4</sub>
Tekijä: Oluwagbemiga P. Ojo, et al.
Julkaistu: (2022-09-01)

SUBBAND-LANDAU LEVEL COUPLING IN A TWO-DIMENSIONAL ELECTRON-GAS IN TILTED MAGNETIC-FIELDS
Tekijä: Brummell, M, et al.
Julkaistu: (1986)

Metal-insulator oscillations in a two-dimensional electron-hole system
Tekijä: Nicholas, R, et al.
Julkaistu: (2000)

Optical second harmonic generation in encapsulated single-layer InSe
Tekijä: Nadine Leisgang, et al.
Julkaistu: (2018-10-01)

Electrical and switching properties of InSe amorphous thin films/
Tekijä: Kenawy, M. A.

Structural and Optical Properties of Interfacial InSe Thin Film
Tekijä: Cansu Emir, et al.
Julkaistu: (2024-02-01)

Optoelectronic properties of the InSe/Ga2S3 interfaces
Tekijä: Najla M. Khusayfan, et al.
Julkaistu: (2018-09-01)