TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE

TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE

Dettagli Bibliografici
Autori principali:	Nicholas, R, Kressrogers, E, Portal, J, Galibert, J, Chevy, A
Natura:	Journal article
Pubblicazione:	1982

Documenti analoghi

CYCLOTRON-RESONANCE STUDIES ON BULK AND TWO-DIMENSIONAL CONDUCTION ELECTRONS IN INSE
di: Kressrogers, E, et al.
Pubblicazione: (1982)

THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
di: Kressrogers, E, et al.
Pubblicazione: (1983)

THE ELECTRIC SUB-BAND STRUCTURE OF ELECTRON ACCUMULATION LAYERS IN INSE FROM SHUBINKOV-DEHAAS OSCILLATIONS AND INTER-SUB-BAND RESONANCE
di: Kressrogers, E, et al.
Pubblicazione: (1983)

TWO-DIMENSIONAL MAGNETOPOLARON COUPLING TO BOTH HOMOPOLAR AND LONGITUDINAL OPTIC PHONONS IN THE LAYER COMPOUND INSE
di: Howell, D, et al.
Pubblicazione: (1989)

Two-dimensional magnetopolaron coupling to both homopolar and longitudinal optic phonons in the layer compound InSe
di: Howell, D, et al.
Pubblicazione: (1989)

Electronic Structures of Twisted Bilayer InSe/InSe and Heterobilayer Graphene/InSe
di: Xiaojing Yao, et al.
Pubblicazione: (2021-05-01)

2D CYCLOTRON-RESONANCE AND MAGNETOPOLARON COUPLING TO HOMOPOLAR AND LO PHONONS IN THE LAYERED SEMICONDUCTOR INSE
di: Howell, D, et al.
Pubblicazione: (1990)

Dimensional crossover in the carrier mobility of two-dimensional semiconductors: the case of InSe
di: Li, W, et al.
Pubblicazione: (2019)

RESONANT MAGNETOPOLARON COUPLING TO BOTH POLAR AND NEUTRAL OPTICAL PHONONS IN THE LAYER COMPOUND INSE
di: Peeters, F, et al.
Pubblicazione: (1992)

Realization of Ultrahigh Strain Modulation in Two‐Dimensional β‐InSe Layers
di: Mingyan Liu, et al.
Pubblicazione: (2023-02-01)

TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS
di: Kressrogers, E, et al.
Pubblicazione: (1980)

Resonant magnetopolaron coupling to both polar and neutral optical phonons in the layer compound InSe
di: Peeters, F, et al.
Pubblicazione: (1992)

CYCLOTRON-RESONANCE OF BOTH MAGNETOPOLARON BRANCHES FOR POLAR AND NEUTRAL OPTIC-PHONON COUPLING IN THE LAYER COMPOUND INSE
di: Nicholas, R, et al.
Pubblicazione: (1992)

Formation and healing of defects in atomically thin GaSe and InSe
di: Hopkinson, DG, et al.
Pubblicazione: (2019)

Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE
di: Chia-Hsing Wu, et al.
Pubblicazione: (2022-07-01)

ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS
di: Nicholas, R, et al.
Pubblicazione: (1980)

Atomic-scale mechanisms of defect- and light-induced oxidation and degradation of InSe
di: Kistanov, Andrey A., et al.
Pubblicazione: (2020)

Defect and doping properties of sliding ferroelectric γ-InSe for photovoltaic applications
di: Zhiwei Lyu, et al.
Pubblicazione: (2024-03-01)

Electronic Structure and I-V Characteristics of InSe Nanoribbons
di: A-Long Yao, et al.
Pubblicazione: (2018-04-01)

Remote Phonon Scattering in Two-Dimensional InSe FETs with High-<i>κ</i> Gate Stack
di: Pengying Chang, et al.
Pubblicazione: (2018-12-01)

Effect of the electron irradiation on electrical properties of n-InSe and their anisotropy
di: I. V. Mintyanskii, et al.
Pubblicazione: (2018-06-01)

Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
di: Yadong Zhang, et al.
Pubblicazione: (2021-12-01)

Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy
di: Sheng-Wei Hsiao, et al.
Pubblicazione: (2022-03-01)

Structure and Physical Properties of In2Se3{Mn}, InSe{Mn} and InSe{Fe} Layered Crystals
di: V. V. Kaminskii, et al.
Pubblicazione: (2016-03-01)

Plasmonic hot electron induced layer dependent anomalous Fröhlich interaction in InSe
di: Mahfujur Rahaman, et al.
Pubblicazione: (2021-07-01)

Modulating the Band Alignments of Two-Dimensional In2Se3/InSe Heterostructure via Ferroelectric Polarization and Interlayer Coupling
di: Yabing Du, et al.
Pubblicazione: (2022-04-01)

Modeling InSe phase-change materials
di: Kohary, K, et al.
Pubblicazione: (2004)

Insulating states of a broken-gap two-dimensional electron-hole system
di: Takashina, K, et al.
Pubblicazione: (2003)

HIGH MAGNETIC-FIELD STUDIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GALNAS-INP SUPER-LATTICES
di: Portal, J, et al.
Pubblicazione: (1983)

Haruan makan anak : inses di Semenanjung Malaysia /
di: 372595 Abd. Hadi Zakaria
Pubblicazione: (1998)

Strain Effect on Thermoelectric Performance of InSe Monolayer
di: Qian Wang, et al.
Pubblicazione: (2019-08-01)

Photoluminescence of BI2O3-inse heterojunctions
di: Evtodiev, Igor
Pubblicazione: (2009-09-01)

Atomically thin photoanode of InSe/graphene heterostructure
di: Haihong Zheng, et al.
Pubblicazione: (2021-01-01)

Structural and Electronic Properties of Cu<sub>3</sub>InSe<sub>4</sub>
di: Oluwagbemiga P. Ojo, et al.
Pubblicazione: (2022-09-01)

SUBBAND-LANDAU LEVEL COUPLING IN A TWO-DIMENSIONAL ELECTRON-GAS IN TILTED MAGNETIC-FIELDS
di: Brummell, M, et al.
Pubblicazione: (1986)

Metal-insulator oscillations in a two-dimensional electron-hole system
di: Nicholas, R, et al.
Pubblicazione: (2000)

Optical second harmonic generation in encapsulated single-layer InSe
di: Nadine Leisgang, et al.
Pubblicazione: (2018-10-01)

Electrical and switching properties of InSe amorphous thin films/
di: Kenawy, M. A.

Structural and Optical Properties of Interfacial InSe Thin Film
di: Cansu Emir, et al.
Pubblicazione: (2024-02-01)

Optoelectronic properties of the InSe/Ga2S3 interfaces
di: Najla M. Khusayfan, et al.
Pubblicazione: (2018-09-01)