Locking of dislocations by oxygen in Cz-silicon
The effect of dislocation locking by oxygen atoms in silicon has been studied for annealing temperatures between 400 degrees C and 850 degrees C and annealing times of 0-1300 h. Using an experimental technique based on four-point and three-point bending the unlocking stress of dislocations has been...
| Những tác giả chính: | , , , |
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| Định dạng: | Conference item |
| Được phát hành: |
1999
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