MODULATED MOLECULAR-BEAM MASS-SPECTROMETRY STUDIES OF THE GROWTH OF GAAS AND INXGA1-XAS USING TRI-ISOBUTYLGALLIUM

MODULATED MOLECULAR-BEAM MASS-SPECTROMETRY STUDIES OF THE GROWTH OF GAAS AND INXGA1-XAS USING TRI-ISOBUTYLGALLIUM

Modulated molecular beam mass spectroscopy (MBMS) studies of the CBE growth of GaAs and InxGa1-xAs using tri-isobutylgallium (TiBG) have been carried out. The results show similarities to studies which have been carried out previously using triethylgallium (TEG) in that hey indicate that the GRa dep...

Bibliográfalaš dieđut
Váldodahkkit:	Levoguer, C, Foord, J, Davies, G, Skevington, P
Materiálatiipa:	Conference item
Almmustuhtton:	Elsevier 1994

Geahča maid

COMPARATIVE-STUDIES OF THE THERMAL-DECOMPOSITION OF TRITERTIARYBUTYLGALLIUM AND TRI-ISOBUTYLGALLIUM ON GAAS(100)
Dahkki: Fitzgerald, E, et al.
Almmustuhtton: (1992)

GROWTH AND MBMS STUDIES OF REACTION-MECHANISMS FOR INXGA1-XAS CBE
Dahkki: Singh, N, et al.
Almmustuhtton: (1992)

MINIBAND STRUCTURE IN INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES
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Almmustuhtton: (1991)

SIMULATION OF SOLAR CELLS BASED ON HETEROSTRUCTURES AlxGa1-xAs - InxGa1-xAs - GaAs
Dahkki: Oleg V. Devitsky, et al.
Almmustuhtton: (2022-05-01)

The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy
Dahkki: Elcess, Kimberley
Almmustuhtton: (2017)

Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots
Dahkki: Liao, X, et al.
Almmustuhtton: (1999)

Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy
Dahkki: Zou, J, et al.
Almmustuhtton: (1997)

Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots
Dahkki: Liao, X, et al.
Almmustuhtton: (1998)

SUPERLATTICE MODIFICATION OF THE VALENCE-BAND SPIN SPLITTING IN INXGA1-XAS/GAAS SUPERLATTICES UP TO 45-T
Dahkki: Warburton, R, et al.
Almmustuhtton: (1993)

CRITICAL THICKNESS DETERMINATION OF INXGA1-XAS/GAAS STRAINED-LAYER SYSTEM BY TRANSMISSION ELECTRON-MICROSCOPY
Dahkki: Zou, J, et al.
Almmustuhtton: (1991)

Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
Dahkki: Lobo, C, et al.
Almmustuhtton: (2000)

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
Dahkki: Zou, J, et al.
Almmustuhtton: (1999)

Synthesizing InxGa1−xAs using molten In and GaAs by the sessile drop method at 400–600 °C
Dahkki: Liang Zhao, et al.
Almmustuhtton: (2017-06-01)

Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots (vol 82, pg 5148, 1999)
Dahkki: Liao, X, et al.
Almmustuhtton: (1999)

Influence of variation in indium concentration and temperature on the threshold current density in InxGa1-xAs/GaAs QD laser diodes
Dahkki: Zainab M. Alharbi, et al.
Almmustuhtton: (2025-01-01)

Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells
Dahkki: Qi Wang, et al.
Almmustuhtton: (2013-07-01)

Influence of magnetron sputtering conditions on the structure and surface morphology of InxGa1–xAs thin films on a GaAs (100) substrate
Dahkki: Oleg V. Devitsky, et al.
Almmustuhtton: (2022-09-01)

Effect on InxGa1-xAs underlying layer growth mode on the surface morphology of In0.5Ga0.5As/GaAs quantum dots /
Dahkki: Abd. Khamim Ismail, author, et al.
Almmustuhtton: (2009)

Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach
Dahkki: Ong, Beng Sheng
Almmustuhtton: (2014)

An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques
Dahkki: Foord, J, et al.
Almmustuhtton: (1996)

Effects of internal strain and external pressure on electronic structures and optical transitions of self-assembled InxGa1−xAs/GaAs quantum dots : an experimental and theoretical study
Dahkki: Wen, Yuan, et al.
Almmustuhtton: (2013)

SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
Dahkki: Davies, G, et al.
Almmustuhtton: (1994)

REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Dahkki: Foord, J, et al.
Almmustuhtton: (1993)

SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Dahkki: Davies, G, et al.
Almmustuhtton: (1993)

Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique
Dahkki: Vicknesh Sahmuganathan
Almmustuhtton: (2008)

Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing
Dahkki: Rene Wutzler, et al.
Almmustuhtton: (2017-01-01)

Arsenic Irradiation Induced Atomic Interdiffusion of InxGa1-xAs/InP Quantum Well Structures
Dahkki: P.L. Gareso,, et al.
Almmustuhtton: (2012-12-01)

Current Density of AlxGa1-xAs/GaAs Superlattice
Dahkki: Ahmed Z. Obaid, et al.
Almmustuhtton: (2024-09-01)

SOME COMPARISONS OF CHEMICAL BEAM EPITAXY INGAAS/INP GROWTH USING TRIETHYLGALLIUM, TRIISOPROPYLGALLIUM AND TRIISOBUTYLGALLIUM SOURCES
Dahkki: Davies, G, et al.
Almmustuhtton: (1994)

Tailoring of the nonlinear optical rectification in vertically and laterally coupled InxGa1-xAs/GaAs quantum dots for Tera-hertz applications: Under In/Ga inter-diffusion, indium segregation, and strains effects
Dahkki: D. Makhlouf, et al.
Almmustuhtton: (2023-05-01)

MAGNETOOPTICAL STUDIES OF SCREENED EXCITONS IN GAAS/ALXGA1-XAS MODULATION-DOPED QUANTUM-WELLS
Dahkki: Henriques, A, et al.
Almmustuhtton: (1992)

INFLUENCE OF LIGHT ON THE CONFINEMENT POTENTIAL OF GAAS/ALXGA1-XAS HETEROJUNCTIONS
Dahkki: Michels, J, et al.
Almmustuhtton: (1995)

Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
Dahkki: Y. C. Chang, et al.
Almmustuhtton: (2015-06-01)

Comparison of electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy∕GaAs quantum wells calculated by 10-band, 8-band, and 6-band k∙p models
Dahkki: Ng, S., et al.
Almmustuhtton: (2013)

MECHANISTIC ASPECTS RELATING TO THE GROWTH OF GAXIN1-XAS BY CBE
Dahkki: French, C, et al.
Almmustuhtton: (1991)

SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
Dahkki: Davies, G, et al.
Almmustuhtton: (1991)

Surface morphology and optical properties of stacked self-assembled InxGa1-xAs QDs grown by metal-organic chemical vapor deposition /
Dahkki: Zulkafli Othaman, author, et al.
Almmustuhtton: (2007)

Impurity Free Vacancy Disordering (IFVD) of InxGa1-xAs/InP Quantum Well Structures for Monolithic Integration of Different Optoelectronic Devices
Dahkki: P L Gareso
Almmustuhtton: (2010-01-01)

Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayers
Dahkki: Tan, H, et al.
Almmustuhtton: (1996)

ELECTRON-LO-PHONON SCATTERING RATES IN GAAS-ALXGA1-XAS QUANTUM-WELLS
Dahkki: Weber, G, et al.
Almmustuhtton: (1991)