Synthesis of two-dimensional hexagonal boron nitride and tin-derivative dichalcogenides for nanoelectronic applications
<p>The discovery of graphene (Gr) has so far drawn significant attention and expanded into the development of other two-dimensional (2D) materials with complementary electronic properties over the past few years. Molybdenum disulfide (MoS<sub>2</sub>) and tungsten disulfide (WS2) a...
Prif Awdur: | Chang, R-J |
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Awduron Eraill: | Warner, J |
Fformat: | Traethawd Ymchwil |
Iaith: | English |
Cyhoeddwyd: |
2019
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Pynciau: |
Eitemau Tebyg
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Nanoelectronics : nanowires, molecular electronics, and nanodevices /
gan: Iniewski, Krzysztof.
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Emerging nanoelectronic devices /
gan: Chen, An (Electronics engineer), et al.
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