Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond
Nanofilm deposits of a porous Sn(IV) oxide are formed by anodic electrodeposition on a polished boron-doped diamond electrode immersed in an aqueous Sn2+ solution. Mechanically and electrochemically stable deposits of 10-15 nm thickness are formed irrespective of the Sn2+ concentration and mass-tran...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2002
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| _version_ | 1797095753987915776 |
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| author | Hyde, M Saterlay, A Wilkins, S Foord, J Compton, R Marken, F |
| author_facet | Hyde, M Saterlay, A Wilkins, S Foord, J Compton, R Marken, F |
| author_sort | Hyde, M |
| collection | OXFORD |
| description | Nanofilm deposits of a porous Sn(IV) oxide are formed by anodic electrodeposition on a polished boron-doped diamond electrode immersed in an aqueous Sn2+ solution. Mechanically and electrochemically stable deposits of 10-15 nm thickness are formed irrespective of the Sn2+ concentration and mass-transport enhancement by power ultrasound. Atomic force microscopy images indicate the presence of a smooth and noncrystalline film, which is stable under ambient conditions. n-type semiconducting characteristics are observed for the aqueous solution redox couples Fe(CN)63-/4- and Ru(NH3)63+/2+. However, preliminary results from voltammetric experiments indicate that the small and neutral organic molecule N,N,N′,N′-tetramethylphenylenediamine is able to diffuse through the porous film to undergo oxidation directly at the surface of the boron-doped diamond electrode. |
| first_indexed | 2024-03-07T04:32:25Z |
| format | Journal article |
| id | oxford-uuid:cec4ccd4-1d07-4455-9bb1-3f3eba99b2d2 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T04:32:25Z |
| publishDate | 2002 |
| record_format | dspace |
| spelling | oxford-uuid:cec4ccd4-1d07-4455-9bb1-3f3eba99b2d22022-03-27T07:37:57ZDeposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamondJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:cec4ccd4-1d07-4455-9bb1-3f3eba99b2d2EnglishSymplectic Elements at Oxford2002Hyde, MSaterlay, AWilkins, SFoord, JCompton, RMarken, FNanofilm deposits of a porous Sn(IV) oxide are formed by anodic electrodeposition on a polished boron-doped diamond electrode immersed in an aqueous Sn2+ solution. Mechanically and electrochemically stable deposits of 10-15 nm thickness are formed irrespective of the Sn2+ concentration and mass-transport enhancement by power ultrasound. Atomic force microscopy images indicate the presence of a smooth and noncrystalline film, which is stable under ambient conditions. n-type semiconducting characteristics are observed for the aqueous solution redox couples Fe(CN)63-/4- and Ru(NH3)63+/2+. However, preliminary results from voltammetric experiments indicate that the small and neutral organic molecule N,N,N′,N′-tetramethylphenylenediamine is able to diffuse through the porous film to undergo oxidation directly at the surface of the boron-doped diamond electrode. |
| spellingShingle | Hyde, M Saterlay, A Wilkins, S Foord, J Compton, R Marken, F Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond |
| title | Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond |
| title_full | Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond |
| title_fullStr | Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond |
| title_full_unstemmed | Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond |
| title_short | Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond |
| title_sort | deposition and characterisation of a porous sn iv semiconductor nanofilm on boron doped diamond |
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