Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstitial oxygen at temperatures just below the melting point. Oxide precipitates therefore can form during ingot cooling and cell processing, and nucleation sites are typically vacancy-rich regions. Oxygen...
| Հիմնական հեղինակներ: | , , , , |
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| Ձևաչափ: | Journal article |
| Հրապարակվել է: |
Elsevier
2014
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