COMPOSITIONAL HOMOGENEITY OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN III-V COMPOUND SEMICONDUCTOR EPILAYERS

COMPOSITIONAL HOMOGENEITY OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN III-V COMPOUND SEMICONDUCTOR EPILAYERS

The compositional homogeneity of epitaxially grown layers of GaInAs, AlInAs, and GaAlInAs on InP substrates has been investigated using pulsed laser atom probe techniques. All the material characterized was shown by transmission electron microscopy to have a fine-scale contrast variation, however on...

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Bibliographic Details
Main Authors:	Mackenzie, R, Liddle, J, Grovenor, C
Format:	Journal article
Language:	English
Published:	1991

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